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SMD Type
N-Channel Enhacement Mode MOSFET 2SK3269
TO-263
+0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
4.5 V drive available Low on-state resistance
Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) Built-in gate protection diode Surface mount device available
+0.2 5.28-0.2
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
+0.2 15.25-0.2
RDS(on)1 = 12 m
MAX. (VGS = 10 V, ID = 18 A)
+0.2 8.7-0.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Ta=25 Tc=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 100 20 35 140 1.5 40 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain source surrender voltage Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf ID=18A,VGS(on)=10V,RG=10 ,VDD=10V VDS=10V,VGS=0,f=1MHZ Testconditons ID=1mA,VGS=0 VDS=20V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=12A VGS=10V,ID=18A VGS=4.5V,ID=18A 1.0 9.0 8.5 12 1300 570 300 70 1220 100 180 12 19 Min 100 10 10 2.5 Typ Max Unit V A A V S m m pF pF pF ns ns ns ns
5.60
1 Gate 2 Drain 3 Source
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